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Analog Devices/Fairchild Semiconductor FQD16N25CTM N-Channel Power MOSFET Transistor 250V 16A TO-252 DPAK
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| Device Type | N-channel enhanced power MOSFET |
| Technical | QFET® Flat Belt and DMOS Technology |
| Leakage Voltage | 250 V |
| Continuous Leakage Current | 16 A |
| Conduction Resistance | 0.27 Ω (Typical Value 0.22 Ω) |
| Grid Source Voltage | 30 V |
| Encapsulation | TO-252 (DPAK) |
| Installation Type | Surface Mount |
| Connector Type | 3 (2 + Radiator Fin) |
| Channel | N-Channel |
| Maximum Working Temperature | 150 °C |
| Lead-Free Code | Yes |
| Manufacturer | ON Semiconductor / Fairchild Semiconductor |
Manufacturer No.
FQD16N25CTMFQD16N25CTM_F080
Interchange No.
FQD16N25C
Electrical and Electronic System - Industrial Encyclopedia
Professional supply of Analog Devices (onsemi)/Fairchild Semiconductor original FQD16N25CTM N-Channel Power MOSFET. The device is manufactured using QFET® flat stripe and DMOS technology, with a voltage rating of 250V, a continuous drain current of 16A, and a low on-state resistance of 0.27Ω (typical value 0.22Ω), in a TO-252 (DPAK) surface mount package. Suitable for power switching, motor driving, DC-DC converters, and consumer electronics in medium to high voltage power applications. Complete technical specifications and reliable inventory available, supporting bulk purchases.